Effect of Gate–Drain Spacing for In 0.52...

Japanese Journal of Applied Physics 2010 / 1 Vol. 49; Iss. 1

Effect of Gate–Drain Spacing for In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As High Electron Mobility Transistors Studied by Monte Carlo Simulations

Endoh, Akira, Shinohara, Keisuke, Awano, Yuji, Hikosaka, Kohki, Matsui, Toshiaki, Mimura, Takashi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.014301
Date:
January, 2010
File:
PDF, 274 KB
english, 2010
Conversion to is in progress
Conversion to is failed