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Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
Gregušová, Dagmar, Gaži, vStefan, Sofer, Zdeněk, Stoklas, Roman, Dobročka, Edmund, Mikulics, Martin, Greguš, Ján, Novák, Jozef, Kordoš, PeterVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.046504
Date:
April, 2010
File:
PDF, 349 KB
english, 2010