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Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)
Narukawa, Mitsuhisa, Asamura, Hidetoshi, Kawamura, Keisuke, Miyake, Hideto, Hiramatsu, KazumasaVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.041001
Date:
April, 2010
File:
PDF, 288 KB
english, 2010