Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy
Yoshimura, Masatoshi, Tomioka, Katsuhiro, Hiruma, Kenji, Hara, Shinjiro, Motohisa, Junichi, Fukui, TakashiVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.04dh08
Date:
April, 2010
File:
PDF, 562 KB
english, 2010