Very High Performance CMOS on Si(551) Using Radical...

Journal of The Electrochemical Society 2010 Vol. 157; Iss. 3

Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure

Cheng, Weitao, Teramoto, Akinobu, Ohmi, Tadahiro
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Volume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3291978
File:
PDF, 447 KB
english, 2010
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