Properties of MIS Capacitors Using the...

Journal of The Electrochemical Society 2008 Vol. 155; Iss. 11

Properties of MIS Capacitors Using the Atomic-Layer-Deposited ZnO Semiconductor and Al[sub 2]O[sub 3] Insulator

Song, Jaewon, Oh, Him Chan, Park, Tae Joo, Hwang, Cheol Seong, Park, Sang-Hee Ko, Yoon, Sung Min, Hwang, Chi-Sun
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Volume:
155
Year:
2008
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2971024
File:
PDF, 819 KB
english, 2008
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