High Voltage AlGaN/GaN High-Electron-Mobility Transistors...

Japanese Journal of Applied Physics 2010 / 4 Vol. 49; Iss. 4

High Voltage AlGaN/GaN High-Electron-Mobility Transistors Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Choi, Young-Hwan, Kim, Sun-Jae, Kim, Young-Shil, Kim, Min-Ki, Seok, Ogyun, Han, Min-Koo
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.04DF06
Date:
April, 2010
File:
PDF, 317 KB
english, 2010
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