Change in Band Alignment of Nitrided Hf-Silicate Films Grown on Ge(001) Using Gaseous NH[sub 3]
Cho, Y. J., Mah, J. W., Kim, C. Y., Kim, H., Lee, H. J., Kang, H. J., Moon, D. W., Kim, S.-O., Cho, M.-H.Volume:
13
Year:
2010
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3322614
File:
PDF, 1.04 MB
english, 2010