TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer...

Electrochemical and Solid-State Letters 2011 Vol. 14; Iss. 5

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Xie, Qi, Musschoot, Jan, Schaekers, Marc, Caymax, Matty, Delabie, Annelies, Lin, Dennis, Qu, Xin-Ping, Jiang, Yu-Long, den Berghe, Sven Van, Detavernier, Christophe
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Volume:
14
Year:
2011
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3559770
File:
PDF, 1.55 MB
english, 2011
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