Process integration of Pr-based high-k gate dielectrics

Microelectronic Engineering 2005 Vol. 82; Iss. 2

Process integration of Pr-based high-k gate dielectrics

A.U. Mane, Ch. Wenger, G. Lupina, T. Schroeder, G. Lippert, R. Sorge, P. Zaumseil, G. Weidner, J. Dabrowski, H.-J. Müssig
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Volume:
82
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2005.07.004
File:
PDF, 370 KB
english, 2005
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