Characterization of strained silicon on relaxed SiGe layer...

Characterization of strained silicon on relaxed SiGe layer made by H ion implantation and annealing in ultra-high vacuum ambient

Changchun Chen, Benhai Yu, Jiangfeng Liu, Qirun Dai
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Volume:
85
Year:
2008
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2007.03.007
File:
PDF, 399 KB
english, 2008
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