Hydrogen effects in MOS devices
L. Tsetseris, D.M. Fleetwood, R.D. Schrimpf, X.J. Zhou, I.G. Batyrev, S.T. PantelidesVolume:
84
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2007.04.076
File:
PDF, 412 KB
english, 2007