MOCVD fluorine free WSix metal gate electrode on high-k...

Microelectronic Engineering 2009 Vol. 86; Iss. 3

MOCVD fluorine free WSix metal gate electrode on high-k dielectric for NMOS technology

R. Gassilloud, F. Martin, C. Leroux, M. Hopstaken, X. Garros, M. Cassé, Gilles Reimbold, Thierry Billon, Daniel Bensahel
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Volume:
86
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2008.04.010
File:
PDF, 695 KB
english, 2009
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