High aspect ratio via metallization for 3D integration...

Microelectronic Engineering 2008 Vol. 85; Iss. 10

High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seed

G. Druais, G. Dilliway, P. Fischer, E. Guidotti, O. Lühn, A. Radisic, S. Zahraoui
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Volume:
85
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2008.06.004
File:
PDF, 942 KB
english, 2008
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