Formation of Ge nanocrystals in a silicon dioxide layer...

Microelectronic Engineering 2009 Vol. 86; Iss. 10

Formation of Ge nanocrystals in a silicon dioxide layer using pulsed plasma-immersion ion implantation

Young Min Kim, Min-Kyu Jeong, Ki-Heung Park, Sang-Goo Jung, Sung-Ho Bae, Jong-Ho Lee
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Volume:
86
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2008.12.096
File:
PDF, 469 KB
english, 2009
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