HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties
S. Mallik, C. Mahata, M.K. Hota, G.K. Dalapati, D.Z. Chi, C.K. Sarkar, C.K. MaitiVolume:
87
Year:
2010
Language:
english
Pages:
7
DOI:
10.1016/j.mee.2010.02.009
File:
PDF, 1.27 MB
english, 2010