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Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks
C. Gaumer, E. Martinez, S. Lhostis, M.-J. Guittet, M. Gros-Jean, J.-P. Barnes, C. Licitra, N. Rochat, N. Barrett, F. Bertin, A. ChabliVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2010.08.023
File:
PDF, 495 KB
english, 2011