The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2–HfO2 stacks and Au nanocrystals
V. Mikhelashvili, B. Meyler, M. Garbrecht, T. Cohen-Hyams, Y. Roizin, M. Lisiansky, W.D. Kaplan, Y. Salzman, G. EisensteinVolume:
88
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.mee.2010.12.030
File:
PDF, 719 KB
english, 2011