SiON and SiO2/HfSiON gate oxides time dependent dielectric...

Microelectronic Engineering 2011 Vol. 88; Iss. 7

SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

P. Delcroix, S. Blonkowski, M. Kogelschatz, M. Rafik, O. Gourhant, D. JeanJean, R. Beneyton, D. Roy, X. Federspiel, F. Martin, X. Garros, H. Grampeix, R. Gassilloud
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2011.03.058
File:
PDF, 573 KB
english, 2011
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