A low gate leakage current and small equivalent oxide...

Microelectronic Engineering 2011 Vol. 88; Iss. 7

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

C.H. Fu, K.S. Chang-Liao, Y.A. Chang, Y.Y. Hsu, T.H. Tzeng, T.K. Wang, D.W. Heh, P.Y. Gu, M.J. Tsai
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Volume:
88
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2011.03.073
File:
PDF, 779 KB
english, 2011
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