Experimental investigation of ESD design window for fully...

Microelectronic Engineering 2011 Vol. 88; Iss. 7

Experimental investigation of ESD design window for fully depleted SOI N-MOSFETs

Thomas Benoist, Claire Fenouillet-Beranger, Pierre Perreau, Christel Buj, Philippe Galy, David Marin-Cudraz, Olivier Faynot, Sorin Cristoloveanu, Pierre Gentil
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Volume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2011.03.112
File:
PDF, 602 KB
english, 2011
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