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Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, G. BenstetterVolume:
88
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.mee.2011.03.122
File:
PDF, 483 KB
english, 2011