Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices
C. Adelmann, D. Lin, L. Nyns, B. Schepers, A. Delabie, S. Van Elshocht, M. CaymaxVolume:
88
Year:
2011
Language:
english
Pages:
3
DOI:
10.1016/j.mee.2011.03.135
File:
PDF, 339 KB
english, 2011