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Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor
Francesco G.Della Corte, Fortunato PezzimentiVolume:
35
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.mejo.2004.01.006
File:
PDF, 134 KB
english, 2004