Effect of In content of the buffer layer on crystalline...

Microelectronics Journal 2007 Vol. 38; Iss. 3

Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

Tiemin Zhang, Guoqing Miao, Yixin Jin, Jianchun Xie, Hong Jiang, Zhiming Li, Hang Song
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Volume:
38
Year:
2007
Language:
english
Pages:
3
DOI:
10.1016/j.mejo.2007.01.015
File:
PDF, 409 KB
english, 2007
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