Determination of boron concentration in heavily doped...

Determination of boron concentration in heavily doped p-type Si1−xGex/Si heterostructure by infrared ellipsometric spectroscopy

Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai
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Volume:
38
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.mejo.2007.01.019
File:
PDF, 580 KB
english, 2007
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