Determination of boron concentration in heavily doped p-type Si1−xGex/Si heterostructure by infrared ellipsometric spectroscopy
Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun DaiVolume:
38
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.mejo.2007.01.019
File:
PDF, 580 KB
english, 2007