Effects of geometry, applied hydrostatic pressure and...

Microelectronics Journal 2008 Vol. 39; Iss. 3-4

Effects of geometry, applied hydrostatic pressure and magnetic field on the electron–hole transition energy in a GaAs–Ga1−xAlxAs pillbox immersed in a system of Ga1−yAlyAs

S.M. Ramos-Arteaga, N. Porras-Montenegro, G.J. Vázquez, M. del Castillo-Mussot
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Volume:
39
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.mejo.2007.07.020
File:
PDF, 206 KB
english, 2008
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