Characteristics of high Al content AlxGa1−xN grown by...

Microelectronics Journal 2007 Vol. 38; Iss. 8-9

Characteristics of high Al content AlxGa1−xN grown by metalorganic chemical vapor deposition

Xiaoyan Wang, Xiaoliang Wang, Guoxin Hu, Baozhu Wang, Zhiyong Ma, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li
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Volume:
38
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.mejo.2007.07.090
File:
PDF, 326 KB
english, 2007
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