A compact C–V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications
Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R.S. GuptaVolume:
38
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.mejo.2007.07.117
File:
PDF, 180 KB
english, 2007