Simulation and experimental results on the forward J–V...

Microelectronics Journal 2007 Vol. 38; Iss. 12

Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes

Francesco G. Della Corte, Fortunato Pezzimenti, Roberta Nipoti
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Volume:
38
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.mejo.2007.09.024
File:
PDF, 225 KB
english, 2007
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