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[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application
Kolahdouz, Mohammadreza, Tabib Zadeh Adibi, Pooya, Afshar Farniya, Ali, Trybom, Erik, Di Benedetto, Luigi, Shayestehaminzadeh, Mohammad, Radamson, Henry H.Year:
2009
Language:
english
DOI:
10.1149/1.3207578
File:
PDF, 312 KB
english, 2009