[ECS 216th ECS Meeting - Vienna, Austria (October 4 -...

  • Main
  • [ECS 216th ECS Meeting - Vienna,...

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

Kolahdouz, Mohammadreza, Tabib Zadeh Adibi, Pooya, Afshar Farniya, Ali, Trybom, Erik, Di Benedetto, Luigi, Shayestehaminzadeh, Mohammad, Radamson, Henry H.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2009
Language:
english
DOI:
10.1149/1.3207578
File:
PDF, 312 KB
english, 2009
Conversion to is in progress
Conversion to is failed