Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling
A. Touré, I. Halidou, Z. Benzarti, T. BoufadenVolume:
40
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mejo.2008.07.059
File:
PDF, 282 KB
english, 2009