Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy
Khoury, M., Leroux, M., Nemoz, M., Feuillet, G., Zúñiga-Pérez, J., Vennéguès, P.Volume:
419
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2015.02.098
Date:
June, 2015
File:
PDF, 899 KB
english, 2015