Deep Electronic Levels of Al x...

Japanese Journal of Applied Physics 2010 / 10 Vol. 49; Iss. 10

Deep Electronic Levels of Al x Ga 1- x N with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Ooyama, Kimihito, Sugawara, Katsuya, Okuzaki, Shinya, Taketomi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Hashizume, Tamotsu
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.101001
Date:
October, 2010
File:
PDF, 370 KB
english, 2010
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