Effect of Base Doping Concentration on Radiation-Resistance...

Japanese Journal of Applied Physics 2010 / 12 Vol. 49; Iss. 12

Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

Elfiky, Dalia, Yamaguchi, Masafumi, Sasaki, Takuo, Takamoto, Tatsuya, Morioka, Chiharu, Imaizumi, Mitsuru, Ohshima, Takeshi, Sato, Shin-ichiro, Elnawawy, Mohamed, Eldesuky, Tarek, Ghitas, Ahmed
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.121202
Date:
December, 2010
File:
PDF, 745 KB
english, 2010
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