Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
Yi-Mu Lee, Yider Wu, Gerald LucovskyVolume:
44
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2003.07.002
File:
PDF, 660 KB
english, 2004