Backside interferometric methods for localization of...

Microelectronics Reliability 2007 Vol. 47; Iss. 9-11

Backside interferometric methods for localization of ESD-induced leakage current and metal shorts

V. Dubec, S. Bychikhin, D. Pogany, E. Gornik, T. Brodbeck, W. Stadler
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Volume:
47
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2007.07.029
File:
PDF, 570 KB
english, 2007
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