The resistive switching characteristics of a Ti/Gd2O3/Pt...

Microelectronics Reliability 2010 Vol. 50; Iss. 5

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

Kou-Chen Liu, Wen-Hsien Tzeng, Kow-Ming Chang, Yi-Chun Chan, Chun-Chih Kuo, Chun-Wen Cheng
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Volume:
50
Year:
2010
Language:
english
Pages:
4
DOI:
10.1016/j.microrel.2010.02.006
File:
PDF, 613 KB
english, 2010
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