1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and...

Microelectronics Reliability 2011 Vol. 51; Iss. 2

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions

Tania Roy, Yevgeniy S. Puzyrev, En Xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, James S. Speck, Sokrates T. Pantelides
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Volume:
51
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2010.09.022
File:
PDF, 676 KB
english, 2011
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