A physical large-signal model for GaN HEMTS including...

Microelectronics Reliability 2011 Vol. 51; Iss. 2

A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

D. Mari, M. Bernardoni, G. Sozzi, R. Menozzi, G.A. Umana-Membreno, B.D. Nener
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Volume:
51
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2010.09.025
File:
PDF, 1.04 MB
english, 2011
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