Normally off Al2O3–AlGaN/GaN MIS-HEMT With...

IEEE Transactions on Electron Devices 2015 / 3 Vol. 62; Iss. 3

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

Lu, Yunyou, Li, Baikui, Tang, Xi, Jiang, Qimeng, Yang, Shu, Tang, Zhikai, Chen, Kevin J.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2388735
Date:
March, 2015
File:
PDF, 1.74 MB
english, 2015
Conversion to is in progress
Conversion to is failed