WSiN Cap Layer for Improvement of Ohmic Contact Morphology...

Japanese Journal of Applied Physics 2009 / 11 Vol. 48; Iss. 11

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

Lu, Chung Yu, Hilt, Oliver, Lossy, Richard, Chaturvedi, Nidhi, John, Wilfred, Chang, Edward Yi, Würfl, Joachim, Tränkle, Günther
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.111003
Date:
November, 2009
File:
PDF, 217 KB
english, 2009
Conversion to is in progress
Conversion to is failed