Coalescence-induced planar defects in GaN layers grown on...

Philosophical Magazine 2013 / 08 Vol. 93; Iss. 23

Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxy

Huang, Chang-Ning, Shields, Philip A., Allsopp, Duncan W.E., Trampert, Achim
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Volume:
93
Language:
english
Journal:
Philosophical Magazine
DOI:
10.1080/14786435.2013.805272
Date:
August, 2013
File:
PDF, 760 KB
english, 2013
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