A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
A.T. Pham, C. Jungemann, C.D. Nguyen, B. MeinerzhagenVolume:
135
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2006.08.010
File:
PDF, 781 KB
english, 2006