Recent progress in 3.3 kV SiC diodes

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

Recent progress in 3.3 kV SiC diodes

P. Brosselard, V. Banu, N. Camara, A. Pérez-Tomás
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Volume:
165
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2008.11.044
File:
PDF, 625 KB
english, 2009
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