A study on mobility degradation in nMOSFETs with HfO2 based...

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

G. Hyvert, T. Nguyen, L. Militaru, A. Poncet, C. Plossu
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Volume:
165
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2009.02.016
File:
PDF, 339 KB
english, 2009
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