MIS field effect transistor with barium titanate thin film...

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

MIS field effect transistor with barium titanate thin film as a gate insulator

P. Firek, A. Werbowy, J. Szmidt
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Volume:
165
Year:
2009
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2009.02.018
File:
PDF, 1000 KB
english, 2009
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