Highly sensitive determination of N+ doping level in 3C–SiC...

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

Highly sensitive determination of N+ doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy

M. Portail, M. Zielinski, T. Chassagne, H. Chauveau, S. Roy, P. De Mierry
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Volume:
165
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.mseb.2009.03.014
File:
PDF, 765 KB
english, 2009
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