Deep levels in Yb–Al co-doped GaAs grown by liquid phase...

Materials Science in Semiconductor Processing 2006 Vol. 9; Iss. 1-3

Deep levels in Yb–Al co-doped GaAs grown by liquid phase epitaxy

M. Kaniewska, S.I. Krukovsky, D.M. Zayachuk
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Volume:
9
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.mssp.2006.01.018
File:
PDF, 171 KB
english, 2006
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