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Characterization of the carrier confinement for InGaN/GaN light emitting diode with multiquantum barriers
Wang, Jen-Cheng, Lin, Chung-Han, Lin, Ray-Ming, Nee, Tzer-En, Fang, Bor-Ren, Wang, Ruey-YuVolume:
831
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-831-E3.27
Date:
January, 2004
File:
PDF, 60 KB
english, 2004